High power high voltage bias-T for half wave resonators and radio frequency quadrupole couplers

Author:

Kaizer B.12ORCID,Weissman L.1,Perry A.1,Zchut T.1,Fishman I.1,Rodnizki J.1,Eizenshtat M.1,Farber E.2

Affiliation:

1. Soreq Nuclear Research Center, Yavne, Israel

2. Department of Electrical and Electronic Engineering and Department of Physics, Ariel University, Ariel, Israel

Abstract

High power high voltage bias-T units capable of delivering up to 100 kW CW RF power at 176 MHz and up to 4 kV DC were developed at the Soreq Nuclear Research Center for the Soreq Applied Research Accelerator Facility linac. Two separate bias-T units with different requirements were designed for the radio frequency quadrupole couplers and the half wave resonator couplers. The purpose of this bias-T is to prevent multipacting phenomena by application of a high voltage DC bias to inner conductors of RF couplers. Underlying design principles, indigenous development, and successful off-line and on-line tests results are presented.

Publisher

AIP Publishing

Subject

Instrumentation

Reference12 articles.

1. A. Kreisel et al., “SARAF phase-I proton/deuteron LINAC beam operation status,” WEIOB02, LINAC’14, Geneva, Switzerland, 2014.

2. D. Berkovits et al., “Operational experience and future goals of the SARAF proton/deuteron LINAC,” LINAC2012, Tel Aviv, 2012, pp. 100–104.

3. Design of RF power coupler for superconducting cavities

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