Raman scattering and infrared reflectivity in [(InP)5(In0.49Ga0.51As)8]30 superlattices
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1287133
Reference22 articles.
1. Local atomic structure in strained interfaces ofInxGa1−xAs/InPheterostructures
2. Anisotropic tunneling in multi-quantum barrier structure
3. Characterization of the interface abruptness of In0.53Ga0.47As/InP multi quantum wells by Raman spectroscopy, X-ray diffractometry and photoluminescence
4. Interfaces of InGaAs/InP multi quantum wells studied by raman spectroscopy
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3. Comparative optical studies of InAlAs/InP quantum wells grown by MOCVD on (311)A and (311)B InP planes;Journal of Materials Science: Materials in Electronics;2020-05-29
4. Effect of substrate polarity on the optical and vibrational properties of (311)A and (311) B oriented InAlAs/InP heterostructures;Physica E: Low-dimensional Systems and Nanostructures;2019-08
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