High-temperature quantum anomalous Hall insulator in two-dimensional Bi2ON
Author:
Affiliation:
1. School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Shandanan Str. 27, Jinan 250100, People's Republic of China
Funder
Youth Science and Technology Talents Enrollment Project of Shandong Province
Shandong Provincial Natural Science Foundation of China
National Natural Science Foundation of China
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.5144064
Reference47 articles.
1. Topological phases in two-dimensional materials: a review
2. The Quantum Anomalous Hall Effect: Theory and Experiment
3. Quantum anomalous Hall effect and related topological electronic states
4. Failure of Conductance Quantization in Two-Dimensional Topological Insulators due to Nonmagnetic Impurities
5. Emerging topological states in quasi-two-dimensional materials
Cited by 6 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Atomic scale quantum anomalous hall effect in monolayer graphene/MnBi2Te4 heterostructure;Materials Horizons;2024
2. p-orbital half-metallicity in metal-free AsN2 monolayer with robust ferromagnetism;Applied Physics Letters;2023-08-14
3. Intrinsic Ferroelectric Quantum Spin Hall Insulator in Monolayer Na3Bi with Surface Trimerization;J PHYS CHEM LETT;2022
4. Intrinsic Ferroelectric Quantum Spin Hall Insulator in Monolayer Na3Bi with Surface Trimerization;The Journal of Physical Chemistry Letters;2022-11-23
5. Spin-polarized topological phases in a ferromagnetic Bi2Te3/MnBi2Te4 bilayer tuned by electric and magnetic fields;Physical Review B;2022-03-21
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线,采集、加工和组织学术论文而形成的新型学术文献查询和分析系统,可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容,当前同舟云学术共收录了国内外主流学术期刊6万余种,收集的期刊论文及会议论文总量共计约1.5亿篇,并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询!咨询电话:010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3