Band alignment at interfaces of amorphous Al2O3 with Ge1−xSnx- and strained Ge-based channels-Reference-Cited by-同舟云学术

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Band alignment at interfaces of amorphous Al2O3 with Ge1−xSnx- and strained Ge-based channels

Published:2014-05-19 Issue:20 Volume:104 Page:202107
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Chou H.-Y.,Afanas'ev V. V.,Houssa M.,Stesmans A.,Vincent B.,Gencarelli F.,Shimura Y.,Merckling C.,Loo R.,Nakatsuka O.,Zaima S.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4878558

Reference37 articles.

1. Solid phase epitaxy of diamond cubic SnxGe1−xalloys

2. Interband Transitions inSnxGe1−xAlloys

3. GeSn/Ge heterostructure short-wave infrared photodetectors on silicon

4. Temperature-dependent photoluminescence of Ge/Si and Ge1-ySny/Si, indicating possible indirect-to-direct bandgap transition at lower Sn content

5. Pseudomorphic GeSn/Ge(001) quantum wells: Examining indirect band gap bowing

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Different Infrared Responses From the Stacked Channels and Parasitic Channel of Stacked GeSn Channel Transistors;IEEE Electron Device Letters;2020-01

2. Band Offset Enhancement of a-Al2O3/Tensile-Ge for High Mobility Nanoscale pMOS Devices;IEEE Electron Device Letters;2017-09

3. Oxidation-induced electron barrier enhancement at interfaces of Ge-based semiconductors (Ge, Ge1−xSnx, SiyGe1−x−ySnx) with Al2O3;Microelectronic Engineering;2017-06

4. MBE growth of ultra-thin GeSn film with high Sn content and its infrared/terahertz properties;J ALLOY COMPD;2016

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