Unique x‐ray diffraction pattern at grazing incidence from misfit dislocations in SiGe thin films
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.362776
Reference28 articles.
1. SILICON:GERMANIUM HETEROJUNCTION BIPOLAR TRANSISTORS: FROM EXPERIMENT TO TECHNOLOGY
2. Silicon-based semiconductor heterostructures: column IV bandgap engineering
3. Reliability of GaAs-based semiconductor diode lasers: 0.6-1.1 mu m
4. High-performance Si/SiGe n-type modulation-doped transistors
5. High-transconductance p-type SiGe modulation-doped field-effect transistor
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1. Architecture of source-drain cavity of a p-channel field effect transistor for embedding with epitaxial SiGe for enhanced performance;Journal of Applied Physics;2011-09-15
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3. High resolution grazing-incidence in-plane x-ray diffraction for measuring the strain of a Si thin layer;Journal of Physics: Condensed Matter;2010-11-15
4. Role of the dislocation screw component in the formation of the dislocation structure in Ge- and Si-based semiconductor heterosystems;Journal of Surface Investigation. X-ray, Synchrotron and Neutron Techniques;2007-06
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