Multisubband transport of the two-dimensional electron gas in AlxGa1−xN/GaN heterostructures
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1536720
Reference22 articles.
1. Occupation of the double subbands by the two-dimensional electron gas in the triangular quantum well atAlxGa1−xN/GaNheterostructures
2. Electron mobility inAlxGa1−xN/GaNheterostructures
3. Influence of strain relaxation of the AlxGa1−xN barrier on transport properties of the two-dimensional electron gas in modulation-doped AlxGa1−xN/GaN heterostructures
4. Single-particle relaxation time of one-dimensional electron gases
5. Single-particle relaxation time versus scattering time in an impure electron gas
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1. A quantitative analysis of electronic transport in n- and p-type modulation-doped GaAsBi/AlGaAs quantum well structures;Semiconductor Science and Technology;2021-10-20
2. Ultrathin InAlN/GaN heterostructures with high electron mobility;physica status solidi (b);2015-02-05
3. Sheet carrier density dependent Rashba spin splitting in the Al0.5Ga0.5N/GaN/Al0.5Ga0.5N quantum well;Journal of Semiconductors;2014-09
4. A numerical study on subband structure of InxAl1−xN/GaN-based HEMT structures with low-indium (x<0.10) barrier layer;Solid State Communications;2013-05
5. Rashba spin splitting in the Al0.3Ga0.7N/GaN heterostructure under uniaxial strain;Physica B: Condensed Matter;2012-02
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