Self-passivated copper as a gate electrode in a poly-Si thin film transistor liquid crystal display
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1375021
Reference18 articles.
1. Selective electroless copper for VLSI interconnection
2. Ta as a barrier for the Cu/PtSi, Cu/Si, and Al/PtSi structures
3. Diffusion barrier properties of TiW between Si and Cu
4. Reaction between Cu and TiSi2across different barrier layers
5. Ternary amorphous metallic thin films as diffusion barriers for Cu metallization
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