Damage accumulation in Si crystal during ion implantation at elevated temperatures: Evidence of chemical effects
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.373551
Reference9 articles.
1. Divacancy control of the balance between ion-beam-induced epitaxial cyrstallization and amorphization in silicon
2. The role of defect excesses in damage formation in Si during ion implantation at elevated temperature
3. Synthesis of Buried Silicon Compounds Using Ion Implantation
4. Damage accumulation during high‐dose, O+implantation in Si
5. Ion-induced damage and amorphization in Si
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3. On the microstructure of Si coimplanted with H+ and He+ ions at moderate energies;Journal of Applied Physics;2010-07-15
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