Reactive sputtering of amorphous silicon in Ne, Ar, and Kr
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.331797
Reference23 articles.
1. Microstructure and properties of rf‐sputtered amorphous hydrogenated silicon films
2. Importance of argon pressure in the preparation of rf‐sputtered amorphous silicon–hydrogen alloys
3. Influence of oxygen and deposition conditions on sputtered a-Si
4. Photovoltaic properties of reactively sputtered a-SiHx films
5. R.F. sputtered amorphous silicon schottky Barrier solar cells
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1. Surface morphology of sputtered Ta2O5thin films on Si substrates from X-ray reflectivity at a fixed angle;Journal of Applied Crystallography;2008-03-08
2. In-situ x-ray reflectivity measurement of the interface roughness of tantalum pentoxide thin film during rf magnetron sputtering deposition;SPIE Proceedings;2002-06-07
3. X-ray study of the surface morphology of crystalline and amorphous tantalum peroxide thin films prepared by RF magnetron sputtering;Journal of Crystal Growth;2002-04
4. Suppressing the surface roughness and columnar growth of silicon nitride films;Surface and Coatings Technology;2001-01
5. Effect of adatom mobility and substrate finish on film morphology and porosity: thin chromium film on hard disk;Journal of Magnetism and Magnetic Materials;2000-02
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