Room temperature operation of GaAsP(N)/GaP(N) quantum well based light-emitting diodes: Effect of the incorporation of nitrogen-Reference-Cited by-同舟云学术

Room temperature operation of GaAsP(N)/GaP(N) quantum well based light-emitting diodes: Effect of the incorporation of nitrogen

Published:2011-06-20 Issue:25 Volume:98 Page:251110
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Robert C.,Bondi A.,Thanh T. Nguyen,Even J.,Cornet C.,Durand O.,Burin J. P.,Jancu J. M.,Guo W.,Létoublon A.,Folliot H.,Boyer-Richard S.,Perrin M.,Chevalier N.,Dehaese O.,Tavernier K.,Loualiche S.,Le Corre A.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.3601857

Reference22 articles.

1. Recent progress in lasers on silicon

2. A continuous-wave Raman silicon laser

3. Low-temperature continuous-wave operation of AlGaAs-GaAs vertical-cavity surface-emitting lasers on Si substrates

4. Growth of low defect density GaP layers on Si substrates within the critical thickness by optimized shutter sequence and post-growth annealing

5. GaP-nucleation on exact Si (001) substrates for III/V device integration

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