Potential profiling across semiconductor junctions by Auger electron spectroscopy in the scanning electron microscope
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.321587
Reference12 articles.
1. Voltage contrast linearization with a hemispherical retarding analyser
2. Voltage contrast linearization with a hemispherical retarding analyser
3. Voltage contrast linearization with a hemispherical retarding analyser
4. AUGER ELECTRON SPECTROSCOPY IN SCANNING ELECTRON MICROSCOPY: POTENTIAL MEASUREMENTS
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1. Measurement of the electric potential in silicon solar cells employing an electron-beam tester;Fresenius' Journal of Analytical Chemistry;1991
2. Measurement of the Surface Electrical Potential in a Planar Avalanche Photodiode Near Breakdown;Journal of The Electrochemical Society;1990-02-01
3. Electron-beam test on power semiconductor devices;Scanning;1988
4. Voltage Measurement in the Scanning Electron Microscope;Advances in Electronics and Electron Physics Volume 69;1987
5. Auger-Elektronen-Mikroanalyse Grundlagen und Anwendungen;Angewandte Oberflächenanalyse mit SIMS Sekundär-Ionen-Massenspektrometrie AES Auger-Elektronen-Spektrometrie XPS Röntgen-Photoelektronen-Spektrometrie;1986
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