Control of tensile strain in germanium waveguides through silicon nitride layers-Reference-Cited by-同舟云学术

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Control of tensile strain in germanium waveguides through silicon nitride layers

Published:2012-05-14 Issue:20 Volume:100 Page:201104
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Ghrib A.,de Kersauson M.,El Kurdi M.,Jakomin R.,Beaudoin G.,Sauvage S.,Fishman G.,Ndong G.,Chaigneau M.,Ossikovski R.,Sagnes I.,Boucaud P.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4718525

Reference27 articles.

1. Ge-on-Si laser operating at room temperature

2. Tensile-strained, n-type Ge as a gain medium for monolithic laser integration on Si

3. Theory of Optical Gain of ${\hbox {Ge--}}{\hbox {Si}}_{x}{\hbox {Ge}}_{y}{\hbox {Sn}}_{1-x-y}$ Quantum-Well Lasers

4. Enhanced direct bandgap emission in germanium by micromechanical strain engineering

5. Tight-binding calculation of optical gain in tensile strained [001]-Ge/SiGe quantum wells

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1. Design of tensile-strained GeSn/SiGeSn structure for low threshold mid-infrared laser application;Journal of Physics D: Applied Physics;2024-07-03

2. Coupling conduction-band valleys in SiGe heterostructures via shear strain and Ge concentration oscillations;npj Quantum Information;2024-05-31

3. Mechanically induced optical loss mechanism due to thermal expansion coefficient mismatch in micro-cavities with all-around stressor layers;APL Photonics;2024-05-01

4. Recent Progress in Silicon‐Based Photonic Integrated Circuits and Emerging Applications;Advanced Optical Materials;2023-09-10

5. PIC-integrable high-responsivity germanium waveguide photodetector in the C + L band;Optics Express;2023-01-13

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