Modeling and analysis of photomodulated reflectance and double crystal x-ray diffraction measurements of tensilely strained InGaAs/InGaAsP quantum well structures-Reference-Cited by-同舟云学术

Modeling and analysis of photomodulated reflectance and double crystal x-ray diffraction measurements of tensilely strained InGaAs/InGaAsP quantum well structures

Published:1998-05 Issue:9 Volume:83 Page:4909-4917
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Rowland G.,Hosea T. J. C.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.367292

Reference25 articles.

1. Band-structure engineering for low-threshold high-efficiency semiconductor lasers

2. Band-structure engineering in strained semiconductor lasers

3. Improved modulator characteristics using tensile strain in long‐wavelength InGaAs/InGaAsP multiple quantum wells

4. Polarization insensitive semiconductor laser amplifiers with tensile strained InGaAsP/InGaAsP multiple quantum well structure

5. Variations of the hole effective masses induced by tensile strain inIn1−xGaxAs(P)/InGaAsP heterostructures

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