Reliability of metal semiconductor field-effect transistor using GaN at high temperature
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.368448
Reference10 articles.
1. Large‐band‐gap SiC, III‐V nitride, and II‐VI ZnSe‐based semiconductor device technologies
2. Microwave performance of GaN MESFETs
3. Temperature activated conductance in GaN/AlGaN heterostructure field effect transistors operating at temperatures up to 300 °C
4. High transconductance-normally-off GaN MODFETs
5. High temperature characteristics of AlGaN/GaN modulation doped field‐effect transistors
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