DyScO3 buffer layer for a performing metal-ferroelectric-insulator-semiconductor structure with multiferroic BiFeO3 thin film
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3116088
Reference17 articles.
1. Ferroelectric Memories
2. Low-voltage operation of metal-ferroelectric-insulator-semiconductor diodes incorporating a ferroelectric polyvinylidene fluoride copolymer Langmuir-Blodgett film
3. Five-day-long ferroelectric memory effect in Pt∕(Bi,La)[sub 4]Ti[sub 3]O[sub 12]∕HfO[sub 2]∕Si structures
4. Characteristics of metal-ferroelectric-insulator-semiconductor diodes composed of Pt electrodes and epitaxial Sr0.8Bi2.2Ta2O9(001)/SrTiO3(100)/Si(100) structures
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