Eight-band k·p modeling of InAs/InGaAsSb type-II W-design quantum well structures for interband cascade lasers emitting in a broad range of mid infrared-Reference-Cited by-同舟云学术

Eight-band k·p modeling of InAs/InGaAsSb type-II W-design quantum well structures for interband cascade lasers emitting in a broad range of mid infrared

Published:2013-12-14 Issue:22 Volume:114 Page:223519
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Ryczko K.,Sęk G.,Misiewicz J.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4843076

Reference31 articles.

1. Room-temperature 3.73 µm GaSb-based type-I quantum-well lasers with quinternary barriers

2. Room temperature continuous wave operation of λ ∼ 3–3.2 μm quantum cascade lasers

3. Rebalancing of internally generated carriers for mid-infrared interband cascade lasers with very low power consumption

4. InAs-based interband cascade lasers with emission wavelength at 10.4 [micro sign]m

5. Continuous-wave interband cascade lasers operating above room temperature at λ = 47-56 μm

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