High resolution thickness measurements of ultrathin Si:P monolayers using weak localization-Reference-Cited by-同舟云学术

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High resolution thickness measurements of ultrathin Si:P monolayers using weak localization

Published:2018-01-22 Issue:4 Volume:112 Page:043102
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Hagmann Joseph A.¹^ORCID,Wang Xiqiao¹²,Namboodiri Pradeep¹,Wyrick Jonathan¹,Murray Roy³,Stewart M. D.³,Silver Richard M.¹,Richter Curt A.¹

Affiliation:

1. Engineering Physics Division, National Institute for Standards and Technology, Gaithersburg, Maryland 20899, USA

2. Chemical Physics Program, University of Maryland, College Park, Maryland 20742, USA

3. Quantum Measurement Division, National Institute for Standards and Technology, Gaithersburg, Maryland 20899, USA

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4998712

Reference43 articles.

1. Nanoscale patterning and oxidation of H‐passivated Si(100)‐2×1 surfaces with an ultrahigh vacuum scanning tunneling microscope

2. Ohm's Law in a Quantum World

3. Atomically Precise Placement of Single Dopants in Si

4. Atomic-Scale, All Epitaxial In-Plane Gated Donor Quantum Dot in Silicon

5. Ohm’s Law Survives to the Atomic Scale

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2. Suppression of Midinfrared Plasma Resonance Due to Quantum Confinement in δ -Doped Silicon;Physical Review Applied;2023-08-17

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4. Probing the Atomic Arrangement of Subsurface Dopants in a Silicon Quantum Device Platform;ACS Applied Materials & Interfaces;2023-04-28

5. Experimental realization of an extended Fermi-Hubbard model using a 2D lattice of dopant-based quantum dots;Nature Communications;2022-11-11

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