Characterization of 6H-SiC surfaces after ion implantation and annealing using positron annihilation spectroscopy and atomic force microscopy
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2161940
Reference25 articles.
1. Positron Annihilation in Semiconductors
2. Slow positron implantation spectroscopy—a tool to characterize vacancy-type damage in ion-implanted 6H-SiC
3. The influence of substrate temperature on the evolution of ion implantation-induced defects in epitaxial 6H–SiC
4. Layer morphology and Al implant profiles after annealing of supersaturated, single-crystalline, amorphous, and nanocrystalline SiC
5. Ion-implantation in bulk semi-insulating 4H–SiC
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1. Positron annihilation studies on N+ implantation induced vacancy type defects and its recovery in SI: 6H- SiC;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2021-10
2. Effect of nitrogen ion implantation in semi insulating 6H-SiC and recrystallization probed by Raman scattering;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2019-10
3. Concentration of point defects in 4H-SiC characterized by a magnetic measurement;AIP Advances;2016-09
4. Critical issues for interfaces to p-type SiC and GaN in power devices;Applied Surface Science;2012-08
5. Structural and transport properties in alloyed Ti/Al Ohmic contacts formed on p-type Al-implanted 4H-SiC annealed at high temperature;Journal of Physics D: Applied Physics;2011-06-07
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