High‐energy argon‐ion implantation for waveguide formation in (AlGa)As/GaAs multilayers
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.104115
Reference15 articles.
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1. Optical Strength Engineering;Semiconductor Laser Engineering, Reliability and Diagnostics;2013-01-24
2. Semiconductor lasers using diffused quantum-well structures;IEEE Journal of Selected Topics in Quantum Electronics;1998
3. RBS studies of the lattice damage caused by 1 Me V Si+ implantation into Al0.3Ga0.7As/GaAs superlattices at elevated temperature;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1994-05
4. Rapid-thermal annealing for quantum-well heterostructure device fabrication;IEEE Transactions on Electron Devices;1992
5. Issues in the realization of strained-layer quantum well optoelectronic devices;Optical and Quantum Electronics;1991
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