Polarity inversion of N-face GaN using an aluminum oxide interlayer
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3524473
Reference50 articles.
1. GaN-Based RF Power Devices and Amplifiers
2. 12 W∕mm power density AlGaN∕GaN HEMTs on sapphire substrate
3. RF Performance of N-Polar AlGaN/GaN MIS-HEMTs Grown by MOCVD on Sapphire Substrate
4. The Polarity of GaN: a Critical Review
5. Review of polarity determination and control of GaN
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