The formation of Ga1−xAlxAs layers on the surface of GaAs during continual dissolution into Ga‐Al‐As solutions
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.91096
Reference9 articles.
1. An isothermal etchback‐regrowth method for high‐efficiency Ga1−xAlxAs‐GaAs solar cells
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3. An automated system for the growth of multilayered structures in the (GaAl)As system by LPE
4. A phenomenological study of meniscus lines on the surfaces of GaAs layers grown by LPE
5. An explanation for the phenomenon of meniscus lines on the surfaces of (GaAl) as alloys grown by LPE
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