Change in equilibrium position of misfit dislocations at the GaN/sapphire interface by Si-ion implantation into sapphire—I. Microstructural characterization-Reference-Cited by-同舟云学术

Change in equilibrium position of misfit dislocations at the GaN/sapphire interface by Si-ion implantation into sapphire—I. Microstructural characterization

Published:2015-07 Issue:7 Volume:5 Page:077180
ISSN:2158-3226
Container-title:AIP Advances
language:en
Short-container-title:AIP Advances

Author:

Lee Sung Bo¹^ORCID,Ju Jin-Woo²,Kim Young-Min³,Yoo Seung Jo³,Kim Jin-Gyu³,Han Heung Nam¹,Lee Dong Nyung¹

Affiliation:

1. Department of Materials Science and Engineering and Research Institute of Advanced Materials (RIAM), Seoul National University, Seoul 151-744, Republic of Korea

2. Korea Photonics Technology Institute, Gwangju 500-779, Republic of Korea

3. Korea Basic Science Institute, Daejeon 305-806, Republic of Korea

Funder

National Research Foundation of Korea (NRF)

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://scitation.aip.org/deliver/fulltext/aip/journal/adva/5/7/1.4927770.pdf?itemId=/content/aip/journal/adva/5/7/10.1063/1.4927770&mimeType=pdf&containerItemId=content/aip/journal/adva

Reference19 articles.

1. Structural Defects and Their Relationship to Nucleation of Gan Thin Films

2. Selective growth of wurtzite GaN and AlxGa1−xN on GaN/sapphire substrates by metalorganic vapor phase epitaxy

3. Metal organic vapour phase epitaxy of GaN and lateral overgrowth

4. Substrates for gallium nitride epitaxy

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