Ultrathin gate-contacts for metal-semiconductor field-effect transistor devices: An alternative approach in transparent electronics
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3430988
Reference23 articles.
1. Highly Bendable, Transparent Thin-Film Transistors That Use Carbon-Nanotube-Based Conductors and Semiconductors with Elastomeric Dielectrics
2. Transparent thin-film transistors with pentacene channel, AlOx gate, and NiOx electrodes
3. ZnO-based transparent thin-film transistors
4. Solution-deposited sodium beta-alumina gate dielectrics for low-voltage and transparent field-effect transistors
5. New contact resistivity characterization method for non-uniform ohmic contacts on GaN
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