Decomposition of interfacial SiO2 during HfO2 deposition
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1621734
Reference13 articles.
1. Thermal stability of polycrystalline silicon electrodes on ZrO2 gate dielectrics
2. Reaction of SiO2 with hafnium oxide in low oxygen pressure
3. Reaction of Oxygen with Si(111) and (100): Critical Conditions for the Growth of SiO2
4. Ion beam crystallography of surfaces and interfaces
5. Medium-energy ion scattering for analysis of microelectronic materials
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1. Point defects in stoichiometric and nonstoichiometric metal oxides for modern microelectronics;Metal Oxide Defects;2023
2. Thermal stability of interface dipole modulation in atomic layer-deposited HfO2/SiO2 multi-stack structures;AIP Advances;2020-08-01
3. Hydrogen passivation of silicon/silicon oxide interface by atomic layer deposited hafnium oxide and impact of silicon oxide underlayer;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2018-01
4. Reliability Study of Ferroelectric Al:HfO2Thin Films for DRAM and NAND Applications;IEEE Transactions on Electron Devices;2017-10
5. Thermodynamic understanding and analytical modeling of interfacial SiO2 scavenging in HfO2 gate stacks on Si, SiGe, and SiC;Applied Physics Letters;2017-04-03
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