Screw dislocation that converts p-type GaN to n-type: Microscopic study on Mg condensation and leakage current in p

Screw dislocation that converts p-type GaN to n-type: Microscopic study on Mg condensation and leakage current in p–n diodes

Published:2020-07-06 Issue:1 Volume:117 Page:012105
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Nakano T.¹,Harashima Y.²^ORCID,Chokawa K.²,Shiraishi K.¹²,Oshiyama A.²^ORCID,Kangawa Y.³^ORCID,Usami S.¹,Mayama N.⁴,Toda K.⁴,Tanaka A.²,Honda Y.¹²,Amano H.¹²

Affiliation:

1. Graduate School of Engineering, Nagoya University, Nagoya 464-8603, Japan

2. Institute of Materials and Systems for Sustainability, Nagoya University, Nagoya 464-8601, Japan

3. Research Institute for Applied Mechanics, Kyushu University, Fukuoka 816-8580, Japan

4. Toshiba Nanoanalysis Corporation, Yokohama 235-8522, Japan

Funder

MEXT “Program for Research and Development of Next-Generation Semiconductors to Realize an Energy-Saving Society”

MEXT “Social and Scientific Priority Issue: Creation of New Functional Devices and High-Performance Materials to Support Next-Generation Industries by post-K Computer”

MEXT “Promoting Researches on the Supercomputer Fugaku”

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/5.0010664

Reference44 articles.

1. The COMFET—A new high conductance MOS-gated device

2. Semiconductors for high‐voltage, vertical channel field‐effect transistors

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