Schottky and charge memory effects in InN nanodomains
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3651327
Reference27 articles.
1. When group-III nitrides go infrared: New properties and perspectives
2. Surface chemical modification of InN for sensor applications
3. Anion detection using ultrathin InN ion selective field effect transistors
4. Investigation of multiple carrier effects in InN epilayers using variable magnetic field Hall measurements
5. Valence band offset of wurtzite InN∕AlN heterojunction determined by photoelectron spectroscopy
Cited by 9 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Growth kinetics and nanoscale structure-property relationships of InN nanostructures on GaN(0 0 0 1);Applied Surface Science;2021-01
2. Polarity Inversion and Electron Carrier Generation in III-Nitride Compounds;Epitaxial Growth of III-Nitride Compounds;2018
3. AuNx stabilization with interstitial nitrogen atoms: A Density Functional Theory Study;Journal of Physics: Conference Series;2017-06
4. Surface profile gradient in amorphous Ta2O5 semi conductive layers regulates nanoscale electric current stability;Applied Surface Science;2017-02
5. Rocking curves of gold nitride species prepared by arc pulsed - physical assisted plasma vapor deposition;Surface and Coatings Technology;2017-01
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3