Effects of rapid thermal annealing on the electrical properties of the AlGaN/AlN/GaN heterostructure field-effect transistors with Ti/Al/Ni/Au gate electrodes-Reference-Cited by-同舟云学术

Effects of rapid thermal annealing on the electrical properties of the AlGaN/AlN/GaN heterostructure field-effect transistors with Ti/Al/Ni/Au gate electrodes

Published:2014-08-25 Issue:8 Volume:105 Page:083501
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Zhao Jingtao,Lin Zhaojun,Luan Chongbiao,Zhou Yang,Yang Ming,Lv Yuanjie,Feng Zhihong

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4894093

Reference24 articles.

1. 10-W/mm AlGaN-GaN HFET with a field modulating plate

2. 55% PAE and High Power Ka-Band GaN HEMTs With Linearized Transconductance via $\hbox{n}+$ GaN Source Contact Ledge

3. 150-GHz Cutoff Frequencies and 2-W/mm Output Power at 40 GHz in a Millimeter-Wave AlGaN/GaN HEMT Technology on Silicon

4. The role of Al on Ohmic contact formation on n-type GaN and AlGaN∕GaN

5. Formation mechanism of Ohmic contacts on AlGaN∕GaN heterostructure: Electrical and microstructural characterizations

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