Influence of initial surface reconstruction on nitridation of Al2O3 (0001) using low pressure ammonia
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2384807
Reference22 articles.
1. In situtransmission electron microscopy of AlN growth by nitridation of (0001) α-Al2O3
2. The effects of nitridation on properties of GaN grown on sapphire substrate by metal-organic chemical vapour deposition
3. Nitridation process of sapphire substrate surface and its effect on the growth of GaN
4. Surface roughness of nitrided (0001) Al[sub 2]O[sub 3] and AlN epilayers grown on (0001)Al[sub 2]O[sub 3] by reactive molecular beam epitaxy
5. X-ray photoelectron spectroscopic study on sapphire nitridation for GaN growth by hydride vapor phase epitaxy: Nitridation mechanism
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1. Nucleation Window of Ga2O3 and In2O3 for Molecular Beam Epitaxy on (0001) Al2O3;Crystal Growth & Design;2023-05-23
2. Peculiarities of the AlN crystalline phase formation in a result of the electron-stimulated reconstruction transition (√31×√31)R ± 9° − (1 × 1);Applied Surface Science;2021-03
3. Electron‐Stimulated Aluminum Nitride Crystalline Phase Formation on the Sapphire Surface;physica status solidi (b);2019-02-15
4. Effect of the Sapphire-Nitridation Level and Nucleation-Layer Enrichment with Aluminum on the Structural Properties of AlN Layers;Semiconductors;2018-05-15
5. Nitridation of an unreconstructed and reconstructed (√31 ×√31)R ± 9° (0001) sapphire surface in an ammonia flow;Semiconductors;2015-07
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