Interface recombination parameters of atomic-layer-deposited Al2O3 on crystalline silicon
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3700241
Reference22 articles.
1. Very low surface recombination velocities on p-type silicon wafers passivated with a dielectric with fixed negative charge
2. Ultralow surface recombination of c-Si substrates passivated by plasma-assisted atomic layer deposited Al2O3
3. Surface passivation of high-efficiency silicon solar cells by atomic-layer-deposited Al2O3
4. High efficiency n-type Si solar cells on Al2O3-passivated boron emitters
5. On the c-Si surface passivation mechanism by the negative-charge-dielectric Al2O3
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