Change in chemical bonding state by thermal treatment in MgO-based magnetic tunnel junction observed by angle-resolved hard X-ray photoelectron spectroscopy

Author:

Niwa Masaaki12ORCID,Yasui Akira3,Ikenaga Eiji3,Honjo Hiroaki12ORCID,Ikeda Shoji1245,Nakamura Tetsuya3ORCID,Endoh Tetsuo12456

Affiliation:

1. Center for Innovative Integrated Electronic Systems, Tohoku University, 468-1 Aza-aoba, Aramaki, Aoba-ku, Sendai 980-8572, Japan

2. Japan Science and Technology (JST)—ACCEL, 4-1-8 Honmachi, Kawaguchi, Saitama, 332-0012, Japan

3. Research & Utilization Division, Japan Synchrotron Radiation Research Institute, 1-1-1 Kouto, Sayo, Hyogo 679-5198, Japan

4. Center for Spintronics Integrated Systems (CSIS), Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan

5. Center for Spintronics Research Network (CSRN), Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan

6. Graduate School of Engineering, Tohoku University, 6-6 Aza-aoba, Aramaki, Aoba-ku, Sendai 980-8579, Japan

Funder

JASRI

JST ACCEL

JST OPERA

Publisher

AIP Publishing

Subject

General Physics and Astronomy

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