Microstructure of V-based ohmic contacts to AlGaN/GaN heterostructures at a reduced annealing temperature
Author:
Affiliation:
1. Institute of Applied Physics, TU Bergakademie Freiberg, 09599 Freiberg, Germany
2. Namlab gGmbH, 01187 Dresden, Germany
3. Institute of Materials Science, TU Bergakademie Freiberg, 09599 Freiberg, Germany
Funder
European Found for Regional Development EFRD
Free State of Saxony
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4907735
Reference19 articles.
1. Band parameters for nitrogen-containing semiconductors
2. Study of contact formation in AlGaN/GaN heterostructures
3. Correlation of contact resistance with microstructure for Au/Ni/Al/Ti/AlGaN/GaN ohmic contacts using transmission electron microscopy
4. TEM Assessment of AuTiAlTi and AuPdAlTi Ohmic Contacts to AlGaN/GaN
5. Structural and electrical characterization of AuPdAlTi ohmic contacts to AlGaN∕GaN with varying Ti content
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3. Ultra-low resistance Au-free V/Al/Ti/TiN ohmic contacts for AlGaN/GaN HEMTs;Applied Physics Letters;2023-11-13
4. Low thermal budget V/Al/Mo/Au ohmic contacts for improved performance of AlGaN/GaN MIS-HEMTs;Japanese Journal of Applied Physics;2023-11-01
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