Stress and interface morphology contributions in the crystallization kinetics of a GexSi1−xthin layer on (100) Si
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.361404
Reference27 articles.
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5. Ge0.6Si0.4rib waveguide avalanche photodetectors for 1.3 μm operation
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1. Stressed solid-phase epitaxial growth of ion-implanted amorphous silicon;Materials Science and Engineering: R: Reports;2008-05
2. Interface roughening and defect nucleation during solid phase epitaxy regrowth of doped and intrinsic Si0.83Ge0.17 alloys;Journal of Applied Physics;2007-05-15
3. Amorphous–crystalline interface evolution during Solid Phase Epitaxy Regrowth of SiGe films amorphized by ion implantation;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2007-04
4. Strain-stabilized solid phase epitaxy of Si–Ge on Si;Journal of Applied Physics;2006-06
5. Interface structure, chemistry and properties of NiAl composites fabricated from matrix-coated single-crystalline Al2O3 fibres (sapphire) with and without an hBN interlayer;Acta Materialia;2006-05
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