Facet degradation of aged strained quantum‐well lasers studied by high‐voltage electron‐beam‐induced current
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.111346
Reference14 articles.
1. Estimation of the reliability of 0.98 μm InGaAs/GaAs strained quantum well lasers
2. Low degradation rate in strained InGaAs/AlGaAs single quantum well lasers
3. Dark‐line observations in failed quantum well lasers
4. Reliability of GaAs-based semiconductor diode lasers: 0.6-1.1 mu m
5. Inhibited dark-line defect formation in strained InGaAs/AlGaAs quantum well lasers
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