Neutron‐ and proton‐induced defects in SiGe alloys: Optical absorption
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1663529
Reference23 articles.
1. GeSi alloy—A new type of nuclear radiation detector
2. Ge–Si Thermoelectric Power Generator
3. 1.8-, 3.3-, and 3.9-μ Bands in Irradiated Silicon: Correlations with the Divacancy
4. DIRECT EVIDENCE OF DIVACANCY FORMATION IN SILICON BY ION IMPLANTATION
5. Divacancylike optical absorption in Si0.5Ge0.5alloy
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1. Divacancy-tin related defects in irradiated germanium;Journal of Applied Physics;2018-04-28
2. Complexes of self-interstitials with oxygen atoms in Ge;AIP Conference Proceedings;2014
3. The interaction between divacancies and shallow dopants in irradiated Ge:Sn;AIP Conference Proceedings;2014
4. Vacancy-Related Defects in Ge Doped with Tin;Solid State Phenomena;2013-10
5. Ge-rich SiGe-on-insulator for waveguide optical modulator application fabricated by Ge condensation and SiGe regrowth;Optics Express;2013-08-13
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