Role of silicon excess in Er-doped silicon-rich nitride light emitting devices at 1.54 μm
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4893706
Reference16 articles.
1. Erbium in silicon
2. Towards population inversion of electrically pumped Er ions sensitized by Si nanoclusters
3. New CMOS-compatible platforms based on silicon nitride and Hydex for nonlinear optics
4. Second-harmonic generation in silicon waveguides strained by silicon nitride
5. Electroluminescence from Er-doped Si-rich silicon nitride light emitting diodes
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