Control of normally on/off characteristics in hydrogenated diamond metal-insulator-semiconductor field-effect transistors-Reference-Cited by-同舟云学术

Control of normally on/off characteristics in hydrogenated diamond metal-insulator-semiconductor field-effect transistors

Author:

Liu J. W.¹,Liao M. Y.²,Imura M.²,Matsumoto T.³,Shibata N.³,Ikuhara Y.³,Koide Y.²⁴⁵

Affiliation:

1. International Center for Young Scientists, National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan

2. Optical and Electronic Materials Unit, NIMS, 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan

3. Institute of Engineering Innovation, School of Engineering, The University of Tokyo, 2-11-16 Yayoi, Bunkyo-ku, Tokyo 113-8656, Japan

4. Nanofabrication Platform, NIMS, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047, Japan

5. Center of Materials Research for Low Carbon Emission, NIMS, 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan

Funder

ICYS

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

Reference34 articles.

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