Curie–Weiss behavior of the low-temperature paramagnetic susceptibility of semiconductors doped and compensated with hydrogen-like impurities
Author:
Affiliation:
1. Physics Department, Belarusian State University, Nezavisimosti Ave. 4, 220030 Minsk, Belarus
2. Ioffe Institute, Politekhnicheskaya 26, 194021 Saint-Petersburg, Russia
Funder
Belarusian National Research Program “Materials Science, New Materials and Technologies”
Belarusian Republican Foundation for Fundamental Research
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
https://aip.scitation.org/doi/pdf/10.1063/5.0048886
Reference41 articles.
1. Electron Spin Resonance Experiments on Shallow Donors in Germanium
2. Antiferromagnetic spin glass ordering in the compensated n ‐Ge near the insulator–metal transition
3. Low-temperature variation of magnetic order in a nonmagnetic n-Ge:As semiconductor in the vicinity of the metal-insulator phase transition
4. Detection of impurity diamagnetic susceptibility and its behavior in n-Ge:As in the region of the insulator–metal phase transition
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