Effects of Mg-doped AlN/AlGaN superlattices on properties of p-GaN contact layer and performance of deep ultraviolet light emitting diodes
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4871996
Reference27 articles.
1. Growth and photoluminescence studies of Al-rich AlN∕AlxGa1−xN quantum wells
2. Robust 285 nm Deep UV Light Emitting Diodes over Metal Organic Hydride Vapor Phase Epitaxially Grown AlN/Sapphire Templates
3. Effect of the AlGaN electron blocking layer thickness on the performance of AlGaN-based ultraviolet light-emitting diodes
4. Improved performance of 325-nm emission AlGaN ultraviolet light-emitting diodes
5. Room-temperature direct current operation of 290 nm light-emitting diodes with milliwatt power levels
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