Oxide thickness dependence of interface trap generation in a metal‐oxide‐semiconductor structure during substrate hot‐hole injection
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.110451
Reference25 articles.
1. Formation of interface traps in MOSFETs during annealing following low temperature irradiation
2. A Framework for Understanding Radiation-Induced Interface States in SiO2 MOS Structures
3. Interface trap formation via the two-stage H/sup +/ process
4. Diffusion of radiolytic molecular hydrogen as a mechanism for the post‐irradiation buildup of interface states in SiO2‐on‐Si structures
5. Time dependence of radiation‐induced interface trap formation in metal‐oxide‐semiconductor devices as a function of oxide thickness and applied field
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3. Defect generation and breakdown of ultrathin silicon dioxide induced by substrate hot-hole injection;Journal of Applied Physics;2001-09
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