Low resistance copper-based ohmic contact for AlGaN/GaN high electron mobility transistors
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4824894
Reference23 articles.
1. Recessed Slant Gate AlGaN/GaN High Electron Mobility Transistors with 20.9 W/mm at 10 GHz
2. Investigation of the mechanism for Ohmic contact formation in Al and Ti/Al contacts ton-type GaN
3. Microstructure of Ti/Al and Ti/Al/Ni/Au Ohmic contacts for n‐GaN
4. Optimisation of the Ti/Al/Ni/Au ohmic contact on AlGaN/GaN FET structures
5. Thermally-stable low-resistance Ti/Al/Mo/Au multilayer ohmic contacts on n–GaN
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2. Effect of TiN barrier layer in Cu-based ohmic contact of AlGaN/GaN high electron mobility transistor;Semiconductor Science and Technology;2023-06-29
3. GaN-based power high-electron-mobility transistors on Si substrates: from materials to devices;Semiconductor Science and Technology;2023-04-25
4. Investigation on the Effect of Annealing Temperature on the Side Ohmic Contact Characteristics for Double Channel GaN/AlGaN Epitaxial Layer;Micromachines;2022-05-19
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