Room-temperature antiferromagnetic CrSe monolayer with tunable metal–insulator transition in ferroelectric heterostructures

Author:

Ni Xiao-Sheng1,Zhang Yue-Yu23ORCID,Yao Dao-Xin1ORCID,Hou Yusheng1ORCID

Affiliation:

1. Guangdong Provincial Key Laboratory of Magnetoelectric Physics and Devices, State Key Laboratory of Optoelectronic Materials and Technologies, Center for Neutron Science and Technology, School of Physics, Sun Yat-Sen University 1 , Guangzhou 510275, China

2. Wenzhou Institute, University of Chinese Academy of Sciences 2 , Wenzhou, Zhejiang 325001, China and , Wenzhou, Zhejiang 325001, China

3. Oujiang Laboratory (Zhejiang Lab for Regenerative Medicine, Vision and Brain Health) 2 , Wenzhou, Zhejiang 325001, China and , Wenzhou, Zhejiang 325001, China

Abstract

Recently, there has been a rapidly growing interest in two-dimensional (2D) transition metal chalcogenide monolayers (MLs) due to their unique magnetic and electronic properties. By using an evolutionary algorithm and first-principles calculations, we report the discovery of a previously unexplored, chemically, energetically, and thermodynamically stable 2D antiferromagnetic (AFM) CrSe ML with a Néel temperature higher than room temperature. Remarkably, we predict an electric field-controllable metal–insulator transition in a van der Waals heterostructure comprised of CrSe ML and ferroelectric Sc2CO2. This tunable transition in the CrSe/Sc2CO2 heterostructure is attributed to the change in the band alignment between CrSe and Sc2CO2 caused by the ferroelectric polarization reversal in Sc2CO2. Our findings suggest that 2D AFM CrSe ML has important potential applications in AFM spintronics, particularly in the gate voltage conducting channel.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

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