Simultaneous diffusion of zinc and indium into GaAs: A new approach for the formation of low resistance ohmic contacts to compound semiconductors
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.96128
Reference7 articles.
1. Ohmic Contacts to p-GaAs with Au/Zn/Au Structure
2. Ohmic Contacts toP-Type GaAs
3. Contact Resistances of Several Metals and Alloys to GaAs
4. Low contact resistance nonalloyed ohmic contacts to Zn-implanted P+ GaAs
5. Proximate capless annealing of GaAs using a controlled‐excess As vapor pressure source
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1. Metals on Semiconductors;Surfaces and Interfaces of Electronic Materials;2012-12-28
2. InxGa1 − xAs-based Ohmic contacts to n-type GaAs with W-nitride barrier prepared by radio frequency sputtering;Applied Surface Science;1997-06
3. Recent developments in ohmic contacts for III–V compound semiconductors;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1992-09
4. An initial investigation of the microstructure of Ti/Pd/Au ohmic contact structures for gaas microwave devices applications;Journal of Electronic Materials;1992-09
5. Ohmic contacts top‐GaAs withp+/pregrown structures formed by metalorganic molecular beam epitaxy;Journal of Applied Physics;1991-06
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