Analysis of ion‐implanted amorphous and polycrystalline silicon films as diffusion sources for ultrashallow junctions
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.349548
Reference42 articles.
1. Effectiveness of polycrystalline silicon diffusion sources
2. Diffusion of boron into polycrystalline silicon from a single crystal source
3. The poly‐single crystalline silicon interface
4. Analysis of polycrystalline silicon diffusion sources by secondary ion mass spectrometry
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