Valley current characterization of high current density resonant tunnelling diodes for terahertz-wave applications-Reference-Cited by-同舟云学术

Valley current characterization of high current density resonant tunnelling diodes for terahertz-wave applications

Published:2017-10 Issue:10 Volume:7 Page:105316
ISSN:2158-3226
Container-title:AIP Advances
language:en
Short-container-title:AIP Advances

Author:

Jacobs K. J. P.¹,Stevens B. J.¹,Baba R.²^ORCID,Wada O.¹,Mukai T.³,Hogg R. A.²

Affiliation:

1. Department of Electronic & Electrical Engineering, The University of Sheffield, Sheffield S3 7HQ, United Kingdom

2. School of Engineering, The University of Glasgow, Glasgow G12 8LT, United Kingdom

3. LED Manufacturing Division, ROHM Co. Ltd., Kyoto 615-8585, Japan

Funder

Leverhulme Trust

RCUK | Engineering and Physical Sciences Research Council

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4997664

Reference31 articles.

1. A Review on Terahertz Communications Research

2. Terahertz imaging based on optical coherence tomography [Invited]

3. K. B. Cooper, R. J. Dengler, N. Llombart, A. Talukder, A. V. Panangadan, C. S. Peay, I. Mehdi, and P. H. Siegel, in Terahertz Physics, Devices, Syst. IV Adv. Appl. Ind. Def., edited by M. Anwar, N. K. Dhar, and T. W. Crowe (2010), p. 76710Y.

4. Cutting-edge terahertz technology

5. S. M. Sze and K. K. Ng, in 3rd ed. (Wiley, Hoboken, New Jersey, 2007), pp. 416–475.

Cited by 9 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Accurate Quantum Transport Modeling of High-Speed In_0.53Ga_0.47As/AlAs Double-Barrier Resonant Tunneling Diodes;IEEE Transactions on Electron Devices;2022-08

2. PL and PLE characterization of high current density resonant tunnelling diodes for THz applications;Terahertz, RF, Millimeter, and Submillimeter-Wave Technology and Applications XV;2022-03-07

3. Micro-PL analysis of high current density resonant tunneling diodes for THz applications;Applied Physics Letters;2021-08-16

4. Fitting of photoluminescence spectra for structural characterisation of high current density resonant tunnelling diodes for THz applications;Terahertz, RF, Millimeter, and Submillimeter-Wave Technology and Applications XIV;2021-03-05

5. Arsenides-and related III-V materials-based multilayered structures for terahertz applications: Various designs and growth technology;Progress in Crystal Growth and Characterization of Materials;2020-05