An x‐ray photoelectron spectroscopy study of the thermal nitridation of SiO2/Si
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.337801
Reference49 articles.
1. Direct Thermal Nitridation of Silicon Dioxide Films in Anhydrous Ammonia Gas
2. Low Pressure Nitrided‐Oxide as a Thin Gate Dielectric for MOSFET's
3. Effect of Thermally Nitrided SiO2 (Nitroxide) on MOS Characteristics
4. Effect of Thermally Nitrided SiO2 (Nitroxide) on MOS Characteristics
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1. Nitridation of thermal SiO2 films by radio-frequency plasma assisted electron cyclotron resonance: Effect of plasma modes and process parameters;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2001-01
2. The Role of Hydrogen in the Formation, Reactivity and Stability of Silicon (Oxy)Nitride Films;Fundamental Aspects of Ultrathin Dielectrics on Si-based Devices;1998
3. Formation of High‐Quality Nitrided Silicon Dioxide Films Using Electron‐Cyclotron Resonance Chemical Vapor Deposition with Nitrous Oxide and Silane;Journal of The Electrochemical Society;1996-05-01
4. Stoichiometry reversal in the growth of thin oxynitride films on Si(100) surfaces;Journal of Applied Physics;1995-12
5. Near-surface profiling of semiconductor materials using neutron depth profiling;Semiconductor Science and Technology;1995-11-01
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