Comparative analysis of the effects of tantalum doping and annealing on atomic layer deposited (Ta2O5)x(Al2O3)1−x as potential gate dielectrics for GaN/AlxGa1−xN/GaN high electron mobility transistors-Reference-Cited by-同舟云学术

Comparative analysis of the effects of tantalum doping and annealing on atomic layer deposited (Ta2O5)x(Al2O3)1−x as potential gate dielectrics for GaN/AlxGa1−xN/GaN high electron mobility transistors

Published:2016-01-14 Issue:2 Volume:119 Page:025303
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Partida-Manzanera T.¹²^ORCID,Roberts J. W.¹,Bhat T. N.²,Zhang Z.²,Tan H. R.²,Dolmanan S. B.²,Sedghi N.¹,Tripathy S.²,Potter R. J.¹^ORCID

Affiliation:

1. Centre for Materials and Structures, School of Engineering, University of Liverpool, Liverpool, L69 3GH, United Kingdom

2. Institute of Materials Research and Engineering, A*STAR (Agency for Science, Technology and Research), Innovis, 2 Fusionopolis way, Singapore 138634

Funder

Engineering and Physical Sciences Research Council (EPSRC)

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4939298

Reference61 articles.

1. Impact of wide bandgap microwave devices on DoD systems

2. SiC and GaN transistors - is there one winner for microwave power applications?

3. AlGaN/GaN/AlGaN Double Heterostructures Grown on 200 mm Silicon (111) Substrates with High Electron Mobility