High‐Field Conductivity in Germanium and Silicon at Microwave Frequencies
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1728360
Reference5 articles.
1. Microwave Field Dependence of Drift Mobility in Germanium
2. The mobility of electrons heated by microwave fields in n-type germanium
3. Mobility in high-resistivity germanium at high d.c. electric fields
4. Determination of Crystal Orientation by High Intensity Reflectograms
5. Minority Carrier Extraction in Germanium
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1. High-field charge transport and noise in p -Si from first principles;Physical Review B;2023-01-05
2. Technical Memoranda: Frequency conversion mechanism in hot carrier harmonic mixers;IEE Proceedings H Microwaves, Antennas and Propagation;1990
3. Microwave Enhancement of Chemical and Physical Reactions;MRS Proceedings;1990
4. Velocity-field characteristics of electrons in doped GaAs;Journal of Electronic Materials;1989-09
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