Misfit dislocation microstructure and kinetics for InxGa1−xAs/InP(100) and (110) interfaces under tensile and compressive stress
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.109670
Reference12 articles.
1. Growth of GexSi1−xalloys on Si(110) surfaces
2. Misfit dislocations in strained layer epitaxy: I. Energetics
3. Quantitative analysis of strain relaxation in GexSi1−x/Si(110) heterostructures and an accurate determination of stacking fault energy in GexSi1−xalloys
4. One-dimensional dislocations. II. Misfitting monolayers and oriented overgrowth
5. One-dimensional dislocations. II. Misfitting monolayers and oriented overgrowth
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