Low-resistance Ohmic contacts for high-power GaN field-effect transistors obtained by selective area growth using plasma-assisted molecular beam epitaxy-Reference-Cited by-同舟云学术

Low-resistance Ohmic contacts for high-power GaN field-effect transistors obtained by selective area growth using plasma-assisted molecular beam epitaxy

Published:2006-07-24 Issue:4 Volume:89 Page:042101
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Hong Seung Jae,Kim Kyekyoon (Kevin)

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.2234566

Reference15 articles.

1. High-power microwave GaN/AlGaN HEMTs on semi-insulating silicon carbide substrates

2. Modulating HBT's current gain by using externally biased on-ledge Schottky diode [GaAs devices]

3. DC and microwave performance of recessed-gate GaN MESFETs using ICP-RIE

4. Systematic characterization of Cl2 reactive ion etching for improved ohmics in AlGaN/GaN HEMTs

5. Low-resistance Ti/Al/Ti/Au multilayer ohmic contact to n-GaN

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