Phonon scattering processes in molybdenum disulfide-Reference-Cited by-同舟云学术

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Phonon scattering processes in molybdenum disulfide

Published:2019-02-04 Issue:5 Volume:114 Page:052102
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Cao Zi-Yu¹²³,Chen Xiao-Jia³

Affiliation:

1. Key Laboratory of Materials Physics, Institute of Solid State Physics, Chinese Academy of Sciences, Hefei 230031, China

2. University of Science and Technology of China, Hefei 230026, China

3. Center for High Pressure Science and Technology Advanced Research, Shanghai 201203, China

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5082932

Reference44 articles.

1. Two-dimensional gas of massless Dirac fermions in graphene

2. Single-layer MoS2 transistors

3. Electronics and optoelectronics of two-dimensional transition metal dichalcogenides

4. Temperature effects on the Raman spectra of graphenes: dependence on the number of layers and doping

5. Temperature and pressure dependent Raman spectroscopy of plasma treated multilayer graphene nanosheets

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4. Raman investigation of lattice anharmonicity and substrate-induced effects in AlN heteroepilayers;Ceramics International;2023-05

5. Indirect Exciton–Phonon Dynamics in MoS₂ Revealed by Ultrafast Electron Diffraction;Advanced Functional Materials;2023-03-15

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